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www.irf.com 1 parameter maximum units i d @ t a = 25c continuous drain current, v gs @ 4.5v 2.4 a i d @ t a = 70c 1.9 i dm pulsed drain current 19 p d @t a = 25c power dissipation 1.3 w p d @t a = 70c 0.8 linear derating factor 10 mw/c v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt 5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c co-packaged hexfet ? power mosfet and schottky diode n-channel hexfet low v f schottky rectifier generation 5 technology micro8 footprint IRF7521D1PBF fetky mosfet / schottky diode notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 9) i sd 1.7a, di/dt 66a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2% surface mounted on fr-4 board, t 10sec parameter maximum units r ja junction-to-ambient 100 c/w absolute maximum ratings (t a = 25c unless otherwise noted) thermal resistance ratings description v dss = 20v r ds(on) = 0.135 ? schottky vf = 0.39v 5/12/04 micro8 the fetky family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulatorapplications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, pda, etc. the new micro8 package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium.the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. pd- 95241 lead-free top view 8 12 3 4 5 6 7 a as g dd k k downloaded from: http:///
IRF7521D1PBF 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a CCC 0.085 0.135 v gs = 4.5v, i d = 1.7a CCC 0.12 0.20 v gs = 2.7v, i d = 0.85a v gs(th) gate threshold voltage 0.70 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 2.6 CCC CCC s v ds = 10v, i d = 0.85a CCC CCC 1.0 v ds = 16v, v gs = 0v CCC CCC 25 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 12v gate-to-source reverse leakage CCC CCC -100 v gs = -12v q g total gate charge CCC 5.3 8.0 i d = 1.7a q gs gate-to-source charge CCC 0.84 1.3 nc v ds = 16v q gd gate-to-drain ("miller") charge CCC 2.2 3.3 v gs = 4.5v, see fig. 6 t d(on) turn-on delay time CCC 5.7 CCC v dd = 10v t r rise time CCC 24 CCC i d = 1.7a t d(off) turn-off delay time CCC 15 CCC r g = 6.0 ? t f fall time CCC 16 CCC r d = 5.7 ? , c iss input capacitance CCC 260 CCC v gs = 0v c oss output capacitance CCC 130 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 61 CCC ? = 1.0mhz, see fig. 5 mosfet electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage curren ? parameter min. typ. max. units conditions i s continuous source current (body diode) CCC CCC 1.3 i sm pulsed source current (body diode) CCC CCC 14 v sd body diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 1.7a, v gs = 0v t rr reverse recovery time (body diode) CCC 39 59 ns t j = 25c, i f = 1.7a q rr reverse recoverycharge CCC 37 56 nc di/dt = 100a/s mosfet source-drain ratings and characteristics parameter max. units. conditions i f(av) max. average forward current 1.9 50% duty cycle. rectangular wave, t a = 25c 1.4 fig.14 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied schottky diode maximum ratings parameter m ax. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.02 v r = 20v t j = 25c 8 t j = 125c c t max. junction capacitance 92 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/ s rated v r schottky diode electrical specifications
hexfet is the reg. tm for international rectifier power mosfet's ) see downloaded from: http:///
IRF7521D1PBF www.irf.com 3 power mosfet characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds 20s pulse width t = 25c a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v j 0.01 0.1 1 10 100 0.1 1 10 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v 20s pulse width t = 150c j 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = 4.5v gs i = 1.7a d downloaded from: http:///
IRF7521D1PBF 4 www.irf.com power mosfet characteristics fig 7. typical source-drain diode forward voltage fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 100 200 300 400 500 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 024681 0 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 9 i = 1.7a v = 16v d ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 0.1 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 100s 1ms 10ms a aj downloaded from: http:///
IRF7521D1PBF www.irf.com 5 power mosfet characteristics 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical on-resistance vs. drain current ? fig 11. typical on-resistance vs. gate voltage 0.0 0.2 0.4 0.6 0.8 1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 a i , drain current (a) d v = 2.5v v = 4.0v v = 5.0v 0.04 0.06 0.08 0.10 0.12 0.0 2.0 4.0 6.0 8.0 a gs v , gate-to-source voltage (v) i = 1.7a d ? downloaded from: http:///
IRF7521D1PBF 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage
fig. 12 -typical forward voltage drop characteristics
0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j fig.14 - maximum allowable ambient temp. vs. forward current 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a average forward current - i (a) allowable ambient temperature - (c) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 dc v = 20v r = 100c/w square wave thja r forward votage drop - v f ( v) downloaded from: http:///
IRF7521D1PBF www.irf.com 7 micro8 part marking information micro8 package outlinedimensions are shown in milimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x lot code (xx) e xamp l e : t h i s i s an i r f 7 501 part number p = de s i gnat e s l e ad - f r e e product (optional) w = we e k y = year dat e code (yw) - s ee tabl e bel ow ww = (1-26) if preceded by las t digit of calendar year ye ar y wor k we e k w 9 2009 5 2005 2003 2002 2001 2004 3 2 14 2007 2006 2008 7 68 2010 0 03 02 0104 c b ad 26 2425 z xy b 2002 b 28 ww = (27-52) if preceded by a letter year 2001 y a week wor k 27 wa k 2010 f 2006 2004 2003 2005 d ce 2008 2007 2009 h gj x 50 30 29 d c 5152 yz downloaded from: http:///
IRF7521D1PBF 8 www.irf.com micro8 tape & reel informationdimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/04 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. downloaded from: http:///

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